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本文研究了在全并行A/D转换器领域中GaAlAs/GaAs异质结双极晶体管(HJBT)工艺的应用前景。为了预测HJBT的前景,与用现代硅工艺可达到的最好性能水平进行了比较。用每一种工艺研制了最佳的锁存比较器,并且进行了SPICE模拟,以便决定其能达到的最大采样率和大信号模拟带宽。在我们进行上述两种工艺的比较时,有这样的一些工艺模式可选用,一种是近期开发阶段的标准的1μm双极工艺与4μmHJBT工艺;另一种是早期开发阶段改进的1μm硅双极工艺与2.5μmHJBT工艺。这样使得随时间流逝的性能改善趋势亦可进行比较。
This paper studies the application of GaAsAs / GaAs heterojunction bipolar transistor (HJBT) technology in the field of fully parallel A / D converters. To predict the future of HJBT, the best performance levels achieved with modern silicon processes are compared. The best latch comparator was developed with each process and SPICE simulations were performed to determine the maximum sample rate and large analog bandwidth it could achieve. In our comparison of the above two processes, there are some process modes available, one is the standard 1μm bipolar process and the 4μm HJBT process in the recent development stage and the other is the 1μm silicon bipolar Technology and 2.5μmHJBT process. This allows the performance improvement over time to be compared.