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以硅为衬底,采用射频磁控溅射技术制备了TiO_2薄膜,利用扫描电子显微镜及拉曼光谱对退火前后的TiO_2进行表征与结构分析。结果表明,退火后的TiO_2具有良好的结晶特性,且呈锐钛矿结构。在此薄膜工艺条件下,以TiO_2为半导体层在玻璃基底上制备了Al/TiO_2/Pt肖特基二极管,并在153~433K温度范围内对其进行了I-V测试,得到以下结果:在整个温度范围内,Al/TiO_2/Pt肖特基二极管均表现出良好的整流特性;其理想因子随温度升高而降低,势垒高度随温度升高而升高;在433K下,理想因子为1.31,势垒高度为0.73,表明此肖特基二极管已接近理想的肖特基二极管。
TiO 2 thin films were prepared by RF magnetron sputtering using silicon as substrate. The morphology and structure of TiO 2 before and after annealing were characterized by scanning electron microscopy and Raman spectroscopy. The results show that the annealed TiO 2 has good crystallinity and anatase structure. Al / TiO_2 / Pt Schottky diodes were fabricated on glass substrate with TiO_2 as the semiconductor layer under the thin film process conditions. The IV test was carried out in the temperature range of 153 ~ 433K. The following results were obtained: Range, the Al / TiO_2 / Pt Schottky diode shows good rectification characteristics; the ideal factor decreases with increasing temperature and the barrier height increases with increasing temperature; the ideal factor is 1.31 at 433K, The barrier height is 0.73, indicating that this Schottky diode is close to the ideal Schottky diode.