论文部分内容阅读
有三种方法能在p型锑化铟(InSb)上形成n~+层。这就是:(1)以能量为60keV、剂量为1×10~(15)Cm~(-2)的质子进行轰击;(2)以能量为100keV、剂量为2×10~(15)cm~(-2)的硅离子进行轰击;(3)Q开关钕—钇铝石榴石(Nd:YAG)激光器照射。将晶片等时退火30分钟后研究了上述三种效应。(1)和(3)两者可以不经退火直接形成n~+层;而方法(2),开初产生p型层,经200℃以上的温度退火后才转换为n~+层。采用方法(2)和(3)得到的n~+层能够经受的退火温度达350℃;而用方法(1)得到的n~+层,当退火温度超过100℃时,又恢复为p型。采用方法(2)和(3)制备的台面型二极管,77K时,正向电流密度由J=1×10~(-3)exp(qV/1.7kT)A/cm~2确定;结电容与反向偏压之间的关系为C∝(V_D+|V|)~(-0.43)。其中扩散势V_D为0.2V。
There are three ways to form an n ~ + layer on p-type indium antimonide (InSb). This is: (1) bombardment with a proton at a dose of 1 × 10 ~ (15) Cm -2 at an energy of 60 keV; (2) bombardment with protons at a dose of 2 × 10 ~ (15) cm ~ (-2) bombardment with silicon ions; (3) Q-switched neodymium-yttrium aluminum garnet (Nd: YAG) laser irradiation. The wafers were annealed isochronously for 30 minutes to investigate the above three effects. (1) and (3) can form n ~ + layer without annealing directly. In the method (2), the p-type layer is formed at the beginning and is converted into the n ~ + layer after being annealed at a temperature above 200 ° C. The n + layer obtained by the methods (2) and (3) can withstand an annealing temperature of 350 ° C. The n ~ + layer obtained by the method (1) returns to p-type when the annealing temperature exceeds 100 ° C . The forward current density is determined by J = 1 × 10 ~ (-3) exp (qV / 1.7kT) A / cm ~ 2 at 77K with the mesa-type diodes prepared by the methods (2) and (3) The relationship between reverse bias is Cα (V_D + | V |) ~ (-0.43). The diffusion potential V_D is 0.2V.