对衬底负偏压热灯丝 Ｃ Ｖ Ｄ 金刚石膜核化过程进行了研究。利用原子力显微镜和扫描电子显微镜观察和分析结果表明，在衬底负偏压下正离子对 Ｓｉ衬底表面轰击导致产生了大量的小坑和尖劈端，以此作为核化点，从而促进了核化过程 The nucleation process of C V D diamond substrate with negative bias was investigated. Atomic force microscopy and scanning electron microscopy observation and analysis of the results show that positive ions in the substrate under the substrate surface bombardment of Si ions resulting in a large number of pits and tip splitting end as a nucleation point, thus contributing to Nucleation process