据《信学技报》(日)2010年109-361期报道,日本住友电工采用圆片级芯片尺寸封装(WLCSP)技术,在GaAs衬底上形成PHEMT有源层,并在其上面设置4层OA-OD布线层构成三维MMIC。AlGaAs/GaAs 0.1μm栅PHEMT的性能,f_T为85GHz,f_(max)为200 GHz。12 GHz下的NF_(min)为0.5 dB。该MMIC集成了LO放大器和低噪声放大器,MMIC尺寸为2.4 mm×2.4 mm。上变频器和下 According to “Letters Science and Technology” (Japan) 2010 109-361 report, Japan Sumitomo Electric using wafer-level chip scale package (WLCSP) technology, the GaAs substrate to form a PHEMT active layer, and in its top 4 Layers of OA-OD wiring layer constitute a three-dimensional MMIC. AlGaAs / GaAs 0.1μm gate PHEMT with f_T of 85GHz and f max of 200GHz. NF_ (min) at 12 GHz is 0.5 dB. The MMIC integrates an LO amplifier and a low-noise amplifier with a MMIC size of 2.4 mm × 2.4 mm. Up converter and down