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本文研究了Cd_2SnO_4薄膜光致发光的某些性质.Cd_2SnO_4膜是利用Cd-Sn合金靶在Ar+O_2气氛中反应溅射而成的.实验研究表明,Cd_2SnO_4膜的发光峰值随着氧浓度的增加移向长波方向.这是因为氧浓度的增加,减少了膜中的氧空位,导致了导带中电子浓度的减小,致使Burstein-Moss效应和电子散射作用相对减弱,从而改变了带隙宽度.
In this paper, some properties of photoluminescence of Cd_2SnO_4 thin films have been studied.Cd_2SnO_4 films are prepared by reactive sputtering of Cd-Sn alloy target in Ar + O_2 atmosphere.The experimental results show that the emission peak of Cd_2SnO_4 films increases with the increase of oxygen concentration To the longwave direction.This is because the oxygen concentration increases, reducing the oxygen vacancies in the film, leading to the conduction band in the electron concentration decreases, resulting in Burstein-Moss effect and electron scattering relatively weakening, thus changing the band gap width .