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非电离能损(NIEL)可用于预测半导体器件在空间辐射环境中位移损伤引起的性能参数退化,计算模型选用经典NIEL模型,计算了能量范围为100 keV～200 MeV的电子入硅、锗、砷化镓材料的NIEL,及微分散射截面、林哈德因子和位移原子数量等信息。考虑到经典NIEL模型在入射电子能量较低的情况下得出的位移原子数量不够精确,所以用分子动力学(MD)方法加以改良,得出在低能区域更真实的位移原子数量,用于修正经典NIEL,并分析了MD模型下新的位移阈值能对计算结果的影响。
Non-ionizable energy loss (NIEL) can be used to predict the degradation of performance parameters caused by the displacement damage of the semiconductor device in space radiation environment. The calculation model uses the classical NIEL model to calculate the energy of electrons into silicon, germanium and arsenic in the range of 100 keV ~ 200 MeV Gallium nitride material NIEL, and the differential scattering cross section, Ringhard factor and the number of displacement atoms and other information. Considering that the classical NIEL model is not accurate enough in the case of low incident electron energies, the molecular dynamics (MD) method was used to improve the more realistic number of displaced atoms in the low energy region for correction Classical NIEL, and analyzes the influence of the new displacement threshold under the MD model on the calculation results.