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开发测试结构是为了实现深槽和阱邻近效应在0.13μm间距工艺中对MOSFET影响的量化。本文分析了两类结构:深槽和阱边缘一起变化以及这些边缘单独变化。测量结果表明,深槽和阱邻近效应能够影响器件性能。
The test structure was developed to quantify the impact of deep trench and well proximity effects on the MOSFET in a 0.13μm pitch process. Two types of structures are analyzed in this paper: deep trenches and well edges change together and these edges vary individually. The measurement results show that the deep trench and well proximity effects can affect device performance.