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对DBR几何参量不同的InGaAsGaAsAlGaAsDBR半导体激光器样品的输出线宽进行了测量和分析.样品激光器DBR光栅取不同的长度和蚀刻深度以考察其几何特性对耦合系数、反射率以及输出线宽的影响.线宽通过自差频测量系统测量得到.对实验结果与理论计算结果进行了对比.对测得的光学特性参数与几何特性参数之间的联系进行了分析.在此基础上讨论了DBR几何特性对激光器输出线宽的影响.研究结果为该类型DBR半导体激光器的制造提供了有用的信息.
The output linewidths of InGaAsGaAsAlGaAsDBR semiconductor laser with different DBR geometrical parameters were measured and analyzed.Different length and etching depth of the sample laser DBR grating were used to investigate the influence of geometric characteristics on the coupling coefficient, reflectivity and output linewidth. The width is measured by a self-measuring frequency measurement system.The experimental results are compared with the theoretical calculation results.The relationship between the measured optical parameters and the geometric parameters is analyzed.On the basis of the discussion, Laser output linewidth.The results provide useful information for the fabrication of this type of DBR semiconductor laser.