通过观测MOS电容由深耗尽到反型层的形成过程,可以测量少数载流子的寿命.其方法就是在MOS电容的栅极上加上足能使表面反型的阶梯电压.起初,多数载流子在半导体表面处于非平衡的深耗尽状态,随后,耗尽层内将产生电子空穴对.在电场的作用下,多于向体 By observing the formation of the MOS capacitor from deep depletion to the inversion layer, the lifetime of minority carriers can be measured by adding sufficient step voltage to the gate of the MOS capacitor to invert the surface. Initially, the majority Carriers in the semiconductor surface in a non-equilibrium state of deep depletion, then the depletion layer will produce electron-hole pairs in the electric field, more than the body