半导体激光焊接豚鼠面神经的实验研究

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运用低功率(500mW)半导体激光(波长810nm)连续辐射豚鼠切断的面神经并与临床常用的端端缝合三针比较.观察吻合后4周、6周和8周时面神经肌电的变化,扫描电镜又透射电镜下面神经形态情况。结果显示在4周时缝合三针的动物面神经损伤较激光焊接的严重,面神经功能恢复明显缓慢(P<0.05)。提示用半导体激光面神经吻合方法是可行的,其作用可能是作用于神经外股后.起到凝固作用。 The guinea pig cut facial nerve was continuously irradiated with a low power (500 mW) semiconductor laser (wavelength 810 nm) and compared with the commonly used end sutures. The changes of EMG of facial nerve were observed at 4 weeks, 6 weeks and 8 weeks after anastomosis, and the morphology of nerve under scanning electron microscope and transmission electron microscope were observed. The results showed that the damage of facial nerve after sutured three-needle was severe than that of laser welding at 4 weeks, and the recovery of facial nerve function was slow (P <0.05). Tips semiconductor laser facial nerve anastomosis method is feasible, its role may be after the role of the nerve extracapsular. Play a solidification effect.
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