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采用热蒸发法制备Sn掺杂(<1%(原子比))四针状ZnO(T-SZO)纳米结构,通过优化生长时间,获得不同形貌TSZO纳米结构,并对其结构和场发射性能进行了研究。结果表明,T-SZO的形貌随生长时间不同有显著变化,继而影响其场发射特性。生长时间为5 min的样品表现大的长径比(长径比为25),其开启场强、阈值场强和场增强因子分别为1.81,3.0 V/μm和6770,表现出良好的场发射性能。
The Sn-doped (<1% (atomic ratio)) tetrapod-like ZnO (T-SZO) nanostructures were prepared by thermal evaporation. The TSZO nanostructures with different morphologies were obtained by optimizing the growth time. The structure and field emission properties Were studied. The results show that the morphology of T-SZO changes significantly with the growth time, and then affects the field emission characteristics. The samples with the growth time of 5 min showed a large aspect ratio (aspect ratio of 25). The open field strength, threshold field strength and field enhancement factor were 1.81, 3.0 V / μm and 6770 respectively, which showed good field emission performance.