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本文介绍了我国用于微区分析的MeV离子微探针设备及其在半导体集成电路中的应用,能量为2MeV的He~+束通过一套限束系统,然后由四单元四极磁透镜聚焦到样品表面的束直径为3μm,束流为300pA.利用该设备分析了半导体集成电路中几个不同区域的元素成份及深度分布.
In this paper, the MeV ion microprobe device for micro-area analysis and its application in semiconductor integrated circuits are introduced. The He ~ + beam with energy of 2MeV passes through a set of confinement system and is then focused by a four-element quadrupole magnetic lens The beam diameter to the sample surface was 3 μm and the beam current was 300 pA. The elemental composition and depth distribution of several different regions of the semiconductor integrated circuit were analyzed using this apparatus.