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Phosphorus-doped ZnO (ZnO:P) thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃and 650℃, respectively, by pulsed laser deposition (PLD), then all the ZnO:P samples are annealed at 650℃in oxygen with a pressure of 1 × 105 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO:P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO:P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton (A0 X ) emission. The electrical properties of ZnO:P films strongly depend on the deposition temperature. The ZnO:P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO:P film deposited at 450℃ shows a resistivity of 1.846Ω.cm and a relatively high hole concentration of 5.100 × 1017 cm-3 at room temperature.