(一)砷化镓单晶中微沉淀物的EDS检测在早期的工作中曾对Ga As:Te和Ga As:Si中微缺陷的结构性质及其与杂质浓度的关系作了TEM研究,结果表明在保持单晶砷化镓结构完整性上,Si是一种远优越于Te的掺杂剂。这不仅表现在Ga As:Si中引起缺陷出现的临界Si电子浓度要比Te高一个数量级,而且还表现在Ga As:Si中的缺陷密度低,尺寸小,分立 (I) EDS Detection of Microprecipitate in GaAs Single Crystal In the early work, the TEM study on the structure of micro defects in GaAs: Te and GaAs: Si and their relationship with the impurity concentration was performed. As a result, It shows that Si is a dopant far superior to Te in maintaining the structural integrity of single crystal gallium arsenide. This shows not only that the critical Si electron concentration causing defects in GaAs: Si is one order of magnitude higher than that of Te but also that the defect density in GaAs: Si is low, the size is small, the discrete