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目的提高A向蓝宝石抛光速率。方法分别采用诱导法和种子法制备了非球形和球形钴掺杂硅溶胶,并应用于A向蓝宝石的化学机械抛光。采用扫描电子显微镜(SEM)、电感偶合等离子体发射光谱仪(ICP)和X射线光电子能谱(XPS)检测产物颗粒的粒径及其分布、形貌、元素组成及存在状态等,采用CP-4抛光机对抛光速率进行验证,并用原子力显微镜测试抛光后的材料表面粗糙度,根据抛光后产物的XPS测试结果对抛光过程中的化学反应进行分析。结果与纯硅溶胶相比,非球形钴掺杂硅溶胶抛光速率提高了37%,且表面粗糙度相近,而球形钴掺杂硅溶胶抛光速率却无明显优势。XPS结果显示,目前没有证据表明Co元素参与了化学反应。结论非球形钴掺杂硅溶胶在A向蓝宝石抛光中起到了积极作用,归因于其形状优势而非Al_2O_3与Co之间的化学反应。
Aim to increase sapphire polishing rate. Methods Non-spherical and spherical cobalt-doped silica sol were prepared by induction and seed methods, respectively, and applied to the chemical mechanical polishing of sapphire. The particle size, distribution, morphology, elemental composition and existing state of the product particles were examined by scanning electron microscopy (SEM), inductively coupled plasma atomic emission spectrometry (ICP) and X-ray photoelectron spectroscopy (XPS) Polisher verifies the polishing rate and the surface roughness of the polished material is measured with an atomic force microscope. The chemical reaction in the polishing process is analyzed according to the XPS test result of the polished product. Results Compared with pure silica sol, the polishing rate of non-spherical cobalt-doped silica sol increased by 37% and the surface roughness was similar. However, there was no obvious advantage in the polishing rate of spherical cobalt-doped silica sol. XPS results show that there is currently no evidence that the Co element is involved in the chemical reaction. Conclusions The non-spherical cobalt-doped silica sol plays a positive role in A-to-sapphire polishing due to its shape rather than the chemical reaction between Al 2 O 3 and Co.