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提出了用阵列电容来监测氧化层的完整性.分析表明,从多个子列的氧化层电容漏电合格率的曲线可以求出氧化层完整性的表征因子 E 值(每个缺陷包含的单元数).“,”The integrity of oxides is evaluated for CMOS process by the pinhole array capacitor. Analyses show that the characteristic factor for oxide integrity E , i.e. the number of elements per defect, can be calculated from oxide capacitor leak current yield curves.