引言绝缘衬底上外延硅工艺起始于1963年。这种工艺分别简写为SIS、ESFI(绝缘层上外延硅薄膜)、SOS、SOSL(尖晶石上外延硅)等。用硅-兰宝石(SOS)工艺已制作出各种器件和电路,如二极管、二极管开关和二极管带、P沟与n沟MOS场效应晶体管及SIG场效应晶体管,用于动态逻辑和存储器的互补MOS电路,高频双极晶体管,由SOS有源元件制作的甚高频和超高频集成电 Introduction The epitaxial silicon process on an insulating substrate starts in 1963. This process is abbreviated as SIS, ESFI (epitaxial silicon thin film on the insulation layer), SOS, SOSL (spinel epitaxial silicon) and so on. Various devices and circuits have been fabricated using silicon-sapphire (SOS) processes such as diodes, diode switches and diode strips, P-channel and n-channel MOS field effect transistors and SIG field effect transistors for dynamic logic and memory complementarity MOS circuits, high frequency bipolar transistors, VHF and UHF integrated circuits made from SOS active components