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利用金属诱导晶化 (Metal Induced Crystallization,MIC)的方法研究了 a- Si/Ni的低温晶化 ,MIC的晶化温度降低到 440℃。采用 XRD、Raman、SEM和 XPS等手段研究了 Ni-MIC多晶硅薄膜的特性 ,分析了薄膜结构和组成 ,讨论了晶化过程的机理。
The low temperature crystallization of a-Si / Ni was studied by metal induced crystallization (MIC) method. The crystallization temperature of MIC was reduced to 440 ℃. The properties of Ni-MIC polycrystalline silicon thin films were studied by means of XRD, Raman, SEM and XPS. The structure and composition of the films were analyzed. The mechanism of crystallization process was discussed.