论文部分内容阅读
电荷转移器件是利用电荷群沿半导体表面移动而传输信息的器件。自1969年San-gster发表BBD和1970年Boyle及Smith发表CCD以后。此种器件迅速地发展起来。它与先后发表的磁泡器件和等离子体耦合器件一样,是具有移位寄存器功能的功能器件。不过,它与以往的二极管、晶体管等具有多种功能的电子器件有着根本的不同。组成移位寄存器的各芯片间必须用金属丝互连,但作为功能器件的电荷转移器件却可以直接连结。因此,可以提高集成度。该特点是功能器件本身所固有的。不过该功能的作用范围还不很广,这是其不足。但是,电荷转移器件有可能应用于自扫描摄象器、存储器、延迟器件等场合。
Charge transfer devices are devices that use the charge mass to move along a semiconductor surface to transmit information. After the San-gster published the BBD in 1969 and Boyle and Smith in 1970 released the CCD. Such devices developed rapidly. It has been published with the bubble device and plasma-coupled devices, is a shift register function of the device. However, it is fundamentally different from conventional multi-function electronic devices such as diodes and transistors. The chips that make up the shift register must be interconnected by wires, but charge-transfer devices as functional devices can be connected directly. Therefore, you can improve the integration. This feature is inherent in the functional device itself. However, the scope of the function is not very broad, which is its lack of. However, charge transfer devices may be used in self-scanning imagers, memories, delay devices and the like.