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在几个恒定磁场中，测量了不同磁场取向下ＹＢａ２Ｃｕ３Ｏ７外延薄膜的电阻转变曲线。实验结果表明，由不同约化电阻判据确定的特征温度Ｔ＊、有效钉扎势Ｕ以及临界电流密度Ｊｃ均随着磁场与膜面的夹角增大而变化，并表现出相同的变化规律。在夹角小于７５范围内，本征钉扎机制起支配作用；而在９０附近，沿ｃ轴方向的二维缺陷等对磁通线的钉扎作用十分明显。
In several constant magnetic fields, the resistance transformation curves of YBa2Cu3O7 epitaxial films under different magnetic field orientations were measured. The experimental results show that the characteristic temperature T *, the effective pinning potential U and the critical current density Jc determined by the different reduction resistance criterion all change with the increase of the included angle between the magnetic field and the film surface, and show the same variation rule . In the range of less than 75, the intrinsic pinning mechanism plays a dominant role. In the vicinity of 90, the pinning effect of two-dimensional defects along the c-axis direction on the magnetic flux lines is very obvious.