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用射频磁控溅射法制备了调制周期分别为5nm、10nm、15nm、20nm的NiFeCo/Ag非连续多层膜。用俄歇能谱仪测量薄膜的成分,用原子力显微镜观测NiFeCo膜层及Ag膜层的表面形貌,用四探针法测量了溅射态的及在280℃、360℃、400℃退火后的多层膜的GMR值。结果表明:薄膜厚度越大,NiFeCo膜层及Ag膜层的表面粗糙度越大。在经各种不同温度退火后,具有[NiFeCo(10nm)/Ag(10nm)]×20结构的多层膜的GMR效应均比其它结构的多层膜的GMR效应强。退火温度也会影响多层膜的GMR值。经360℃退火后,在79.6kA/m的外加饱和场下[NiFeCo(10nm)/Ag(10nm)]×20呈现出最强的巨磁电阻效应,其GMR值达到11%。
NiFeCo / Ag discontinuous multilayer films with modulation periods of 5nm, 10nm, 15nm and 20nm were prepared by RF magnetron sputtering. The composition of the films was measured with an Auger spectrometer. The surface morphology of the NiFeCo films and the Ag films was observed with an atomic force microscope. The sputtered states of the NiFeCo films and the Ag films were measured by a four-probe method and after annealed at 280 ° C, 360 ° C and 400 ° C Of the GMR value of the multilayer film. The results show that the larger the film thickness, the greater the surface roughness of NiFeCo film and Ag film. The multilayer films with [NiFeCo (10 nm) / Ag (10 nm)] × 20 structures have higher GMR effect than those of the other structure multilayer films after annealing at various temperatures. The annealing temperature also affects the GMR value of the multilayer film. After annealing at 360 ℃, [NiFeCo (10nm) / Ag (10nm)] × 20 exhibits the strongest GMR effect with an GMR value of 11% at an applied saturation field of 79.6kA / m.