将 Ｖ Ｃ Ｅ 方法推广到反铁磁顺磁相变的情况中去，从而使 Ｖ Ｃ Ｅ 方法不仅可以计算居里点，同时也可计算耐尔点．利用随机键（ 包括稀释随机键） 层状伊辛模型，给出了磁性合金（ 包括稀释磁性合金） 膜临界点的计算公式，进而计算了某些条件下的 Ｔｃχ相图并作了讨论． The V C E method is extended to the case of antiferromagnetic  paramagnetic phase transition so that the V C E method not only calculates the Curie point, but also calculates Nile point. The formula of the critical point of the magnetic alloy (including diluted magnetic alloy) film is given by using the layered Ising model with random keys (including diluted random keys). Then the Tcχ phase diagram under some conditions is calculated and discussed .