研究了180 nm互补金属氧化物半导体技术下的器件沟道长度对总剂量辐照效应的影响.在其他条件如辐照偏置、器件结构等不变的情况下,氧化层中的陷阱电荷决定了辐照响应.浅沟槽隔离氧化层中的陷阱电荷使得寄生的侧壁沟道反型,从而形成大的关态泄漏电流.这个电流与沟道长度存在一定的关系,沟道长度越短,泄漏电流越大.首次发现辐照会增强这个电流的沟道长度调制效应,从而使得器件进一步退化. The effects of device channel length at 180 nm CMOS technology on the total dose irradiation effect were investigated. Under other conditions, such as irradiation bias and device structure, the trap charge in the oxide layer Irradiation Response The trap charge in the shallow trench isolation oxide causes inversion of the parasitic sidewall channel to form a large off-state leakage current, which is related to the channel length and the shorter the channel length , The larger the leakage current is.Firstly found that the irradiation will enhance the current channel length modulation effect, making the device further degradation.