松下电气产业中央研究所把原来的二极管激光器结构改成异质结双极性晶体管(HBT)结构,研制了由晶体管的二个独立基极电极构成的半导体激光器。这种半导体激光器不受载流予积累效应的影响,由于能瞬时停止发光,因而可实现高速化工作,而且通过控制两个基极电极可使激光器左右单侧出光或两侧同时出光,这是一种结构全新而又具有重要应用价值的器件。图1是这种器件的结构图。 Matsushita Electric Industrial Central Research Institute of the original diode laser structure into a heterojunction bipolar transistor (HBT) structure, developed by the transistor’s two independent base electrode semiconductor laser. This semiconductor laser is not affected by the effect of the current-carrying accumulation. Since the light can be stopped instantaneously, the semiconductor laser can be operated at high speed. By controlling the two base electrodes, the laser emits light on one side or both sides of the laser at the same time. A new structure and has important application value of the device. Figure 1 is a block diagram of this device.