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本文总结了硅片化学腐蚀减薄工艺运用于制备减薄均匀的、直径为20mm、厚度为10多μm、晶格完美的硅片的经验。腐蚀液是用CO_2气体搅抖的HF—HNO_3混合溶液。硅片在减薄容器内“自转”并“公转”。 文中讨论了腐蚀液组分与腐蚀速度的关系,也考虑了影响腐蚀减薄质量的一些主要因素。为获得合格的产品,文中特别叙述了具体操作技术。
This paper summarizes the experience of silicon chemical etching thinning process used in the preparation of thinned uniform, 20mm diameter, 10μm thick, perfect lattice silicon. The etching solution is HF-HNO 3 mixed solution stirred with CO 2 gas. The wafer “spins” and “revolves” within the thinned container. The paper discusses the relationship between the composition of the etching solution and the etching rate, and also considers some of the major factors that affect the quality of the etching thinning. In order to obtain qualified products, the article specifically describes the specific operating techniques.