论文部分内容阅读
采用丘克拉斯基(Czochralski)技术生长了掺铥硅酸镥(Tm∶Lu2SiO5,Tm∶LSO)晶体;测量了LSO晶体在室温下的非偏振吸收光谱和非偏振荧光光谱;利用窄得-奥菲特(Judd-Ofelt)理论计算了Tm∶LSO晶体的窄得-奥菲特强度参数、振子强度、自发辐射概率、辐射寿命、积分吸收截面和积分发射截面.Tm∶LSO晶体的强度参数为Ω2=9.1355×10-20cm2,Ω4=8.4103×10-20cm2,Ω6=1.5908×10-20cm2;Tm∶LSO晶体在1.9μm附近有明显的发射峰(3F4→3H6跃迁),相应的辐射寿命为2.03 ms,积分发射截面为5.81×10-18cm2,半峰全宽(FWHM)为250 nm.用Tm∶LSO晶体在77 K温度下实现了激光运转.利用792 nm的激光二极管(LD)作为抽运源,获得中心波长为1960 nm的激光输出,抽运阈值为2.13 kW/cm2.
The Tm: Lu2SiO5, Tm: LSO doped crystals were grown by Czochralski technique. The unpolarized and unpolarized fluorescence spectra of LSO crystals were measured at room temperature. Judd-Ofelt theory calculates the narrow-Orfit intensity parameter, oscillator strength, spontaneous emission probability, radiation lifetime, integral absorption cross section and integral emission cross section of Tm: LSO crystal.The intensity parameters of Tm: LSO crystal are Ω2 = 9.1355 × 10-20cm2, Ω4 = 8.4103 × 10-20cm2, Ω6 = 1.5908 × 10-20cm2; Tm: LSO crystal has obvious emission peak (3F4 → 3H6 transition) near 1.9μm, and the corresponding radiation lifetime is 2.03 ms with an integral emission cross section of 5.81 × 10-18 cm 2 and a full width at half maximum (FWHM) of 250 nm Laser operation was achieved with a Tm: LSO crystal at 77 K. Using a 792 nm laser diode (LD) Source, a laser output with a center wavelength of 1960 nm and a pumping threshold of 2.13 kW / cm2.