Revealing the Pressure-Induced Softening/Weakening Mechanism in Representative Covalent Materials

来源 :中国物理快报(英文版) | 被引量 : 0次 | 上传用户:zxw364963027
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
Diamond,cubic boron nitride (c-BN),silicon (Si),and germanium (Ge),as examples of typical strong covalent materials,have been extensively investigated in recent decades,owing to their fundamental importance in material science and industry.However,an in-depth analysis of the character of these materials' mechanical behaviors under harsh service environments,such as high pressure,has yet to be conducted.Based on several mechanical criteria,the effect of pressure on the mechanical properties of these materials is comprehensively investigated.It is demonstrated that,with respect to their intrinsic brittleness/ductile nature,all these materials exhibit ubiquitous pressure-enhanced ductility.By analyzing the strength variation under uniform deformation,together with the corresponding electronic structures,we reveal for the first time that the pressure-induced mechanical softening/weakening exhibits distinct characteristics between diamond and c-BN,owing to the differences in their abnormal charge-depletion evolution under applied strain,whereas a monotonous weakening phenomenon is observed in Si and Ge.Further investigation into dislocation-mediated plastic resistance indicates that the pressure-induced shuffle-set plane softening in diamond (c-BN),and weakening in Si (Ge),can be attributed to the reduction of antibonding states below the Fermi level,and an enhanced metallization,corresponding to the weakening of the bonds around the slipped plane with increasing pressure,respectively.These findings not only reveal the physical mechanism of pressure-induced softening/weakening in covalent materials,but also highlights the necessity of exploring strain-tunable electronic structures to emphasize the mechanical response in such covalent materials.
其他文献
Algorithms for wavefront sensing and error correction from intensity attract great concern in many fields.Here we propose Bayesian optimization to retrieve phas
期刊
Interracial structures and interactions of two-dimensional (2D) materials on solid substrates are of fundamental importance for fabrications and applications of
期刊
Detection of local strain at the nanometer scale with high sensitivity remains challenging.Here we report near-field infrared nano-imaging of local strains in b
期刊
FeSO4 has the characteristics of low cost and theoretical high energy density (799 W.h.kg-1 with a two-electron reaction),which can meet the demand for next-gen
期刊
Interfacial structure evolution and degradation are critical to the electrochemical performance of LiCoO2 (LCO),the most widely studied and used cathode materia
期刊
GaAs/Ge heterostructures have been employed in various semiconductor devices such as solar cells,high-performance CMOS transistors,and Ⅲ Ⅴ/Ⅳ heterogeneous op
期刊
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures,in which MnSe is an antiferromagnetic insulator,and (Bi,Sb
期刊
We show that a suitable combination of flat-band ferromagnetism,geometry and nontrivial electronic band topol-ogy can give rise to itinerant topological magnons
期刊
某患者女性,25岁,身高160cm,体重48kg,入院原因为出现转移性右下腹痛,时间超过4小时.患者在入院前7小时左右出现明显上腹阵发性疼痛,并伴有恶心呕吐现象,呕吐物为胃内容物,且
期刊
We present the superconducting (SC) property and high-robustness of structural stability of kagome CsV3Sb5 under in situ high pressures.For the initial SC-Ⅰ ph
期刊