论文部分内容阅读
在C6 0 单晶超高真空解理面上制备C6 0 的Rb填隙化合物薄膜 .用同步辐射光电子能谱研究了相衍变过程 .观察到对应于固溶相、Rb1 C6 0 和Rb3C6 0 的电子态密度分布 .当数纳米厚Rb3C6 0 薄膜在C6 0 单晶 (111)解理面形成后 ,室温条件下进一步沉积Rb至样品表面不产生fcc到bct或bcc结构相变 .C6 0 分子的大尺寸提供了表面填隙位置使得样品表面形成Rb4 C6 0 和Rb5C6 0 吸附相 .价带电子能谱结果表明这两种表面相为金属性 .Rb 3d芯态电子能谱测量进一步证实了表面Rb4 C6 0 和Rb5C6 0 吸附相的存在 .
C6 0 Rb interstitial compound thin films were prepared on the C6 0 single-crystal ultra-high vacuum cleavage surface.The phase evolution was studied by synchrotron radiation photoelectron spectroscopy.Electrons corresponding to solid solution phase, Rb1 C6 0 and Rb3C6 0 were observed State density distribution. When a few nanometers thick Rb3C6 0 thin film is formed on the (111) cleavage plane of C6 0 single crystal, further deposition of Rb to the sample surface at room temperature does not produce the transformation of fcc to bct or bcc structure. The size provided surface interstitial sites for the formation of Rb4 C6 0 and Rb5C6 0 adsorbed on the sample surface.The results of valence band electron spectroscopy showed that the two surface phases were metallic.The Rb3c electron energy spectrum measurements further confirmed that the surface Rb4 C6 0 and Rb5C6 0 adsorption phase.