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为研究磁控溅射法中溅射功率、氧氩比、基底温度、工作气压、溅射时间等对VO_2薄膜制备的影响,寻找VO_2薄膜的最佳制备参数,本文采用正交实验法,设计了5因素4水平的16组实验,然后按照设计的正交实验方案实施了实验,在实验中严格控制实验条件并记录;实验完成后采用X射线衍射方法对实验结果进行测试并分析了氧化钒薄膜的物相组分,探究了制备条件因素与水平对薄膜组分的影响;然后采用直观比较的方法,从16组实验中选取符合结果或接近期望的实验组。最后得出制备VO_2薄膜的优选参数为:溅射功率220 W,压强0.8 Pa,基底温度300℃,氧氩比为0.5∶25。
In order to study the influence of sputtering power, oxygen-argon ratio, substrate temperature, working pressure and sputtering time on the preparation of VO_2 thin films in magnetron sputtering, the optimum preparation parameters of VO_2 thin films were investigated. In this paper, The experiment of 16 groups of 5 factors and 4 levels was carried out. Then the experiment was carried out according to the designed orthogonal experiment scheme. The experimental conditions were strictly controlled and recorded. After the experiment was completed, the experimental results were tested by X-ray diffraction and analyzed. Film phase composition of the film to explore the conditions and factors that affect the level of composition of the film; and then using an intuitive comparison method, from 16 groups of experiments were selected or close to the desired results of the experimental group. Finally, the optimal parameters for preparing VO_2 thin films are: sputtering power of 220 W, pressure of 0.8 Pa, substrate temperature of 300 ℃ and oxygen / argon ratio of 0.5:25.