建立了直流电弧等离子体喷射ＣＶＤ大面积金刚石沉积数学模型．对衬底上方等离子 体中的化学环境进行了模拟计算，并与在相同条件下对等离子体的光谱结果进行对比，发现计 算结果与实验结果基本上吻合．在模拟条件下ＣＨ基团可能是促使金刚石生长的主要活化基 因．模拟结果显示ＣＨ基因沿径向的均匀分布对大面积金刚石膜生长有较大的意义． A mathematical model of large area diamond deposition deposited by DC arc plasma jet CVD was established. The chemical environment in the plasma above the substrate is simulated and compared with that of the plasma under the same conditions. The calculated results are in good agreement with the experimental results. Under simulated conditions, CH group may be the main activation gene to promote the growth of diamond. The simulation results show that the uniform distribution of CH gene in the radial direction is of great significance for the growth of large area diamond films.