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In this paper, we describe the design, fabrication and high frequency performance of an a-Si:H emitter heterojunction power transistor which operates with low supply voltage at ultra high frequency. The packaged transistor can deliver 4.0W cw output power with 72% collector efficiency and 8.2dB gain at 470MHz for 9.0V low supply voltage. This is the best result reported up to now in the area of amorphous silicon emitter hetero-juction microwave power transistors.
In this paper, we describe the design, fabrication and high frequency performance of an a-Si: H emitter heterojunction power transistor which operates with low supply voltage at ultra high frequency. The packaged transistor can deliver 4.0W cw output power with 72% collector efficiency and 8.2dB gain at 470MHz for 9.0V low supply voltage. This is the best result reported up to now in the area of amorphous silicon emitter hetero-juction microwave power transistors.