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在讨论光栅外腔半导体激光器理论的基础上,对影响Littrow型光栅外腔半导体激光器输出功率和线宽压窄的各种因素进行了数值模拟分析。研制了单纵模高质量激光输出的Littrow型光栅外腔半导体激光器,在工作电流为400 mA时,连续输出功率达到180 mW,线宽优于1MHz。
On the basis of discussing the grating external cavity semiconductor laser theory, various factors that affect the output power and linewidth narrowing of the Littrow grating external cavity semiconductor laser are numerically simulated. A single longitudinal mode high quality laser output Littrow grating external cavity semiconductor laser was developed with a continuous output power of 180 mW and a linewidth of better than 1 MHz at a current of 400 mA.