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根据加压改进布里奇曼法 ,采用“二次配料”工艺成功地生长了直径 40 mm的大直径 Hg Cd Te (组分 x≈0 .2 0 )晶体 .采用加压技术 ,平衡部分石英安瓶内的高汞蒸汽压 ,有效地避免了石英安瓶的爆裂 ;采用“二次配料”工艺 ,大大降低了生长温度 ;合理选择温度梯度和生长速度 ,获得了有较好结晶性和组分均匀性的 Hg Cd Te晶体 .分析表明 :Hg Cd Te晶片的载流子浓度 n77≤ 4× 10 1 4 cm- 3 ,迁移率 μ77≥ 1× 10 5 cm2 /(V· s) ,少数载流子寿命值 τ≥ 2 .0 μs,80 K时简单的性能测试用光导探测器件的探测率 D*为 1.1× 10 1 0 cm· Hz1 /2 /W.
According to the pressure-enhanced Bridgman’s method, a large diameter Hg Cd Te (component x≈0.20) crystal with a diameter of 40 mm was successfully grown by the “secondary compounding” process. The pressure was applied to balance part of the quartz The high mercury vapor pressure in the ampoule effectively avoided the popping of the quartz ampoule. The process of “secondary dosing” greatly reduced the growth temperature; the temperature gradient and the growth rate were reasonably selected, and the better crystallinity and group The results show that the carrier concentration of HgCdTe wafer is n77≤4 × 1014 cm-3 and the mobility is μ77≥1 × 10 5 cm2 / (V · s) The lifetime value of the flow is τ ≥ 2.0 μs. The detection rate D * of the light guide detection device for simple performance test at 80 K is 1.1 × 10 10 cm · Hz 1/2 / W.