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采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在(100)面GaSb单晶衬底上外延生长了InAsSb材料.用X射线双晶衍射、光学显微镜和扫描电镜、电子探针能谱仪等对材料特性进行了表征,分析研究了生长温度、Ⅴ/Ⅲ比、过渡层等对外延层的影响.并且获得了与GaSb衬底晶格失配度较低的表面光亮的晶体质量较好的InAsSb外延层.
InAsSb material was epitaxially grown on (100) GaSb single crystal substrate by using a low pressure metal-organic chemical vapor deposition LP-MOCVD device.Using X-ray double crystal diffraction, optical microscopy and scanning electron microscopy, Spectrometer and other materials were characterized on the analysis of the growth temperature, Ⅴ / Ⅲ ratio, the transition layer on the epitaxial layer, and obtained with the GaSb substrate lattice mismatch low surface brightness crystal quality A better InAsSb epitaxial layer.