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A composition-modulated (HfO2)x (Al2O3)1-x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO2)x (Al2O3)1-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.
A composition-modulated (HfO2) x (Al2O3) 1-x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition improves the data retention even at high temperatures, and enhances the program / erase speed. Improvements of the memory characteristics are attributed to the composition-modulated charge trapping layer may be useful in the future nonvolatile flash memory device application.