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用高频溅射法制备了ＦｅＮｉＣｒＳｉＢ／Ｃｕ／ＦｅＮＩＣｒＳｉＢ膜，经３５０℃退火２０ ｍｉｎ后得到性能优良的巨磁阻抗材料．磁畴结构观察表明，样品中心为均匀的细条畴，靠近边缘，磁畴方向转向横向．这种畴结构有利于磁力线的闭合，是获得显著的巨磁阻抗效应的重要原因之一。磁阻抗测量表明，样品在１３ＭＨｚ的频率下，分别获得了６３％和７７％的纵向和横向磁阻抗比。
The FeNiCrSiB / Cu / FeNICrSiB films were prepared by high-frequency sputtering and the giant magneto-impedance materials with excellent properties were obtained after annealed at 350 ℃ for 20 min. Magnetic domain structure observation shows that the center of the sample is a thin strip domain, close to the edge, and the direction of the magnetic domain turns to the horizontal direction. This domain structure is conducive to the closure of the magnetic field lines, which is one of the important reasons for obtaining a significant giant magneto-impedance effect. Magneto-impedance measurements showed that the samples achieved 63% and 77% longitudinal and transverse magnetoresistance ratios at 13 MHz, respectively.