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对降低铌酸锂(LN)电光调制器的半波电压进行了研究,探索了利用反射结构实现低半波电压的原理。通过退火质子交换工艺在x切LN晶片上制作了反射结构的LN电光调制器。测试表明,这种反射结构的LN电光调制器在保持器件长度不变的条件下可以降低半波电压。
The research on reducing the half-wave voltage of the LiNbO3 electro-optic modulator has been carried out and the principle of using the reflective structure to realize the low half-wave voltage has been explored. An LN electro-optic modulator with a reflective structure was fabricated on an x-cut LN wafer by an annealing proton exchange process. The test shows that the LN electro-optic modulator with the reflective structure can reduce the half-wave voltage while keeping the length of the device unchanged.