808nm网状电极高功率垂直腔面发射激光器

来源 :半导体光电 | 被引量 : 0次 | 上传用户:leezero666
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
为改善高功率垂直腔面发射激光器(VCSEL)电流注入均匀性,提高光束输出质量和器件的输出功率,设计并研制出808nm高功率网状电极VCSEL。将VCSEL P面的注入电极由传统的环形结构改为网状结构并且热沉位于N面电极。实验制备了出光孔径同为500μm的传统环形电极和网状电极两种高功率VCSEL,并对器件的性能进行了对比测试。测试结果表明,网状电极结构高功率VCSEL相对传统环形电极结构高功率VCSEL器件具有良好的光电特性,室温下新结构高功率VCSEL的阈值电流为430mA,斜率效率为0.44mW/mA,电光转换效率可达21.7%,最大输出功率可达420mW,是传统结构高功率VCSEL输出功率的2.27倍。 In order to improve the current injection uniformity of high power vertical cavity surface emitting laser (VCSEL) and improve the output quality of the light beam and the output power of the device, a 808nm high power mesh electrode (VCSEL) was designed and fabricated. The injection electrode of the VCSEL P-face is changed from a conventional ring-shaped structure to a network structure and the heat sink is located on the N-face electrode. Two kinds of high power VCSELs, which are traditional ring electrodes and mesh electrodes with the same aperture of 500μm, were fabricated experimentally. The performances of the devices were compared and tested. The test results show that the high power VCSEL with mesh electrode structure has good photoelectric properties compared with the traditional high power VCSEL with ring electrode structure. The threshold current of the new structure high power VCSEL at room temperature is 430mA, the slope efficiency is 0.44mW / mA, Up to 21.7%, the maximum output power up to 420mW, 2.27 times the output power of the traditional high-power VCSEL structure.
其他文献
使用柱坐标的传输矩阵法计算并分析了在反谐振反射光波导(ARROW)型垂直腔面发射激光器(VCSEL)中,不同的第一包裹层厚度对应的基模和一阶横模的侧向辐射损耗。与传统平板近似
专名问题在任何文化中都可以成为语言管理中重要的社会语言学问题。在汉字文化圈政体中,汉字在人名中的使用及其音译转写有鲜明的个性。本文从语言规划角度考察汉字文化圈中