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第二代红外成象系统要求高密度的焦平面列阵便于凝视成象应用。为满足此需要,研制了光电二极管HgCdTe探测器和信号处理Si—CCD器件相组合的焦平面结构。通常用的离子注入混合列阵与CCD多路传输器虽然已成功地实现互连,但是用液相外延(LPE)层制备的混合列阵在性能、信号处理和输出效率方面具有独特的优点。采用富汞LPE技术制备的异质结二极管,其性能优于一般的离子注入器件。这种器件的面电阻高,组分均匀性好。本文就8—12μm和3—5μm波段范围所用器件的制备情况作简要介绍。
The second generation of infrared imaging systems require high-density focal plane arrays for staring imaging applications. To meet this need, a focal plane structure combining photodiode HgCdTe detector and signal processing Si-CCD device has been developed. Commonly used ion-implanted hybrid arrays and CCD multiplexers, although successfully interconnected, have unique advantages in terms of performance, signal processing and output efficiency with hybrid arrays fabricated using liquid-phase epitaxy (LPE) layers. Heterojunction diodes fabricated using mercury-rich LPE technology perform better than typical ion implantation devices. The device has high sheet resistance and good component uniformity. This article describes the preparation of devices used in the 8-12μm and 3-5μm band range.