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用超高真空扫描隧道显微镜(UHV-STM)研究了金属富勒烯分子Gd@C82在Si(111)7×7重构表面的吸附特性和电学特性。STM形貌像显示Gd@C82分子和Si基底之间相互作用较强,Gd@C82分子吸附在Si基底的三种特定的位置上,其中在Si(111)7×7单胞内三个顶戴原子间的吸附位最稳定。扫描隧道谱(STS)的测量显示Gd@C82分子呈现半导体特性。分子表面局域电子态密度(LDOS)在Gd附近受到Gd与碳笼间电子转移的影响,发生显著变化。
The adsorption and electrical properties of Gd @ C82, a metal fullerene molecule, on Si (111) 7 × 7 surface were investigated by using ultra-high vacuum scanning tunneling microscope (UHV-STM) The topography of STM shows that there is strong interaction between Gd @ C82 molecules and Si substrate. Gd @ C82 molecules are adsorbed on three specific sites of Si substrate. Three tops of Si (111) 7x7 cells Wear atomic adsorption sites the most stable. Measurement of Scanning Tunneling Spectroscopy (STS) showed that Gd @ C82 molecules exhibit semiconducting properties. The local surface electronic density of states (LDOS) on the surface of the molecule is greatly affected by the electron transfer between Gd and carbon cage near Gd.