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本文详细地介绍了在圆偏振光作用下,NEA GaAs表面发射目旋极化光电子的原理,及NEA GaAs表面的制备和装置。介绍了表面Cs-O激活的方法。在用此法激活的NEA GaAs(100)表面上可得到灵敏度为8μA/mW,极化度约用35%以上的光电子束。发现清洁的GaAs表面覆盖以50%—60%Cs单原子层时,光电子的发射出现第一个极大值,同时发现稳定的发射取决于铯吸附量。
In this paper, we introduce in detail the principle of surface spin-polarized photoelectrons emitted by NEA GaAs under the action of circularly polarized light and the preparation and device of NEA GaAs surface. The method of surface Cs-O activation is introduced. On the surface of NEA GaAs (100) activated by this method, a photoelectron beam with a sensitivity of about 8μA / mW and a polarizability of about 35% can be obtained. It was found that when the surface of clean GaAs was covered with 50% -60% Cs monolayers, the first maximum of the photoelectron emission appeared and the stable emission was found to depend on the amount of cesium adsorption.