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采用2μm的设计规则,在硅工艺线上,成功设计和制作了128×128PtSi高速逐行扫描CCD器件。介绍了器件的结构、制作工艺和参数测试结果。
Using 2μm design rules, the 128 × 128PtSi high-speed progressive scan CCD device was successfully designed and fabricated on the silicon process line. The device structure, manufacturing process and parameter test results are introduced.