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采用射频磁控溅射在PMMA、PC等有机衬底和无机玻璃衬底上制备ITO透明导电膜。研究溅射功率对不同衬底上ITO膜电学性能与红外光谱的影响。无机玻璃衬底上,随溅射功率增加ITO膜电阻率降低,等离子吸收波长向短波方向移动;有机衬底上,在相同的溅射功率,有机衬底比无机衬底上ITO膜的载流子浓度低,电阻率前者比后者大。较高的溅射功率(≤130W)有助于有机衬底ITO膜致密度增加、氧空位增多,有机衬底和GLASS衬底上ITO膜载流子差距减小,进而电阻率差距减少。过高的溅射功率(>130 W)破坏有机衬底,其上ITO膜电阻率变大。
RF magnetron sputtering was used to fabricate ITO transparent conductive films on organic substrates such as PMMA and PC and inorganic glass substrates. The effect of sputtering power on the electrical properties and infrared spectra of ITO films on different substrates was investigated. On an inorganic glass substrate, the resistivity of the ITO film decreases as the sputtering power increases, and the plasma absorption wavelength moves toward the shortwave. On the organic substrate, under the same sputtering power, the organic substrate has a higher carrier current than the ITO film on the inorganic substrate Low concentration, the former resistivity than the latter. The higher sputtering power (≤130W) contributes to the increase of the density of the ITO film on the organic substrate and the increase of the oxygen vacancies. The gap between the ITO film on the organic substrate and the GLASS substrate decreases, and the difference in resistivity decreases. Too high sputtering power (> 130 W) damages the organic substrate, on which the ITO film resistivity becomes large.