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提出了一种直接提取GaInP GaAs异质结双极晶体管 (HBT)小信号模型参数的新方法 .该方法基于HBT器件S参数的测试数据 ,对HBT的小信号模型进行电路网络分析 ,利用S ,Z ,Y参数关系以及电路“抽出”的技巧 ,分别对HBT小信号模型的寄生参数和本征元件参数进行提取 ,建立了一套完整的直接提取HBT小信号模型参数的新方法 .与文献报道HBT小信号模型参数提取的方法相比 ,该方法的优点是 ,提取过程具有简明清晰的物理意义 ,无需建立特殊的测试结构 ,无需引入繁琐的数学优化过程 ,提取速度快 ,并且具有比较好的精度和较宽频带范围的适用性等 .
A new method to directly extract small signal parameters of GaInP GaAs heterojunction bipolar transistor (HBT) is proposed.Based on the test data of HBT S-parameters, the method analyzes the circuit of HBT small signal model, Z, Y parameters and the circuit “draw-out” technique, the parasitic parameters and eigen-element parameters of the HBT small signal model are respectively extracted, and a new complete set of new methods for directly extracting HBT small signal model parameters is established. Compared with the method of parameter extraction of HBT small signal model, the advantage of this method is that the extraction process has a clear and clear physical meaning, without the need to establish a special test structure, without introducing cumbersome mathematical optimization process, the extraction speed is fast, and has a good Accuracy and applicability of a wider frequency band and the like.