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上海玩具十五厂主要生产高速ECL电路。在改用上海合金厂提供的区熔P型单晶作衬底之后,发现隔离击穿和二极管特性均比一般直拉单晶为好,电路成品率较高,因此将所有品种都选用区熔单晶作衬底。但是在“E→T”电路的生产中,发现按原有工艺条件生产,虽然静态参数测量完全符合要求,而动态测试表明,开关速度过慢,后沿的平均延迟时间t_(pd2)比设计标准长一倍之多,无法满足整机的要求。为此,我们对影响“E→T”电路开关速度的因素作了剖析,并提出磷扩散后变温氧化工艺的新措施。实践证明,能显著地降低贮存时间。
Fifteen Shanghai toy factory mainly produces high-speed ECL circuit. Switch to the Shanghai plant provided by the melting zone P-type single crystal substrate, and found that the breakdown breakdown and diode characteristics than the average Czochralski crystal is better, the circuit yield is higher, so all varieties are selected zone melting Single crystal substrate. However, in the production of “E → T” circuit, it was found that it was produced according to the original process conditions. Although the measurement of static parameters fully met the requirements, and the dynamic tests showed that the switching speed was too slow, the average delay time t_ (pd2) Standard twice as long, can not meet the requirements of the whole machine. For this reason, we analyze the factors that affect the switching speed of the “E → T” circuit and propose new measures for the post-phosphorus oxidation process. Practice has proved that can significantly reduce the storage time.