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硅通孔(TSV)是三维电子封装的关键部位,因此分析其应力状态对评估TSV可靠性非常重要。建立了微型红外光弹性系统,并可施加热载荷来表征TSV结构的应力。在测试系统的全域和实时的模式下得到结论:即便制造技术和工艺是一样的,每个TSV应力状态是不同的;不同的TSV其零应力温度也不相同;并且即便温度升高,TSV仍保持零应力状态。为了对TSV的应力进行定量分析,建立了有限元模型,获得了TSV在不同零应力的温度下的应力状态。基于光弹性原理和有限元结果构造出不同零应力温度下的虚拟光弹性条纹,通过虚拟条纹与实验结果的对比,选取适当的虚拟光弹性条纹图案从而可确定TSV的应力。
Through-silicon vias (TSVs) are a key part of 3D electronics packages, so analyzing their stress state is important to assessing TSV reliability. A miniature infrared photoelastic system was established and thermal stress was applied to characterize the TSV structure. It is concluded in the test system’s global and real-time modes that the stress state varies for each TSV, even though the manufacturing technology is the same as for the process; the TSV has a different zero-stress temperature; and even if the temperature rises, the TSV Keep zero stress state. In order to quantitatively analyze the stress of TSV, a finite element model was established, and the stress state of TSV at different zero stress was obtained. Based on the photoelastic principle and finite element results, the virtual photoelastic streaks at different zero stress temperature are constructed. By comparing the virtual streaks with the experimental results, the appropriate virtual photoelastic streak pattern can be selected to determine the TSV stress.