Selectors have been proposed as a highly effective tool for suppressing substantial leakage currents without sacrificing the high density of resistive random-access memory (RRAM) crossbar arrays.Among various selector types,the programmable metallization cell (PMC) selector is promising due to its simple structure and high selectivity.In this work,we demonstrate a new PMC selector that exhibits bidirectional threshold switching behavior by implementing symmetric multilayer dielectrics.The proposed Ag/SiTe/HfO2/SiTe/Ag selector device has a low off current (＜ 10-10 A),high selectivity (＞ 105),and low threshold voltage variation (＜ 0.05).Upon connection to a bipolar RRAM cell via a wire,the proposed selector successfully suppresses the leakage current of an unselected device below the threshold voltage.