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A systematic study of the behaviour of Pd/p-ZnO thin film Schottky diode has been reported.The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper.Seebeck measurement confirmed the p-type nature of Cu-doped ZnO thin film.The X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of (101) of ZnO film.The surface morphological study demonstrated the conformal deposition of a thin film over n-Si wafer.The estimated bandgap of Cu-doped ptype ZnO thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K.The measured electrical parameters of the proposed Pd/p-ZnO Schottky diode have also been validated by the results of numerical simulation obtained by using ATLAS~(TM) device simulator.
A systematic study of the behavior of Pd / p-ZnO thin film Schottky diode has been reported. The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper. type nature of Cu-doped ZnO thin film. X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of (101) of ZnO film. The surface morphological study demonstrated the conformal deposition of a thin film over n- Si wafer. The estimated band gap of Cu-doped ptype ZnO thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K. The measured electrical parameters of the proposed Pd / p-ZnO Schottky diode have been validated by the results of numerical simulation obtained by using ATLAS ~ (TM) device simulator.