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在863计划资助下,集成光电子学国家重点实验室肖建伟、陈良惠、徐俊英等研制成功低阈值电流量子阱激光器(高技术通讯,本期18页),并于1991年2月通过专家鉴定,标志我国量子阱光电子器件技术进入世界先进行列,遂成为1991年中国十大科技新闻之一。肖建伟等人研制的量子阱激光器采用应变层结构,大大降低了阈值电流,最佳值低达1.55mA,系迄今国内外文献报道的最好结果。这种激光器还可在155℃的极高温度下正常工
Under the funding of the 863 Program, Xiao Jianwei, Chen Lianghui and Xu Junying, State Key Laboratory of Integrated Optoelectronics, successfully developed low-threshold current quantum well lasers (high-tech communications, this issue 18 pages). In February 1991, they were certified by experts and marked China’s quantum well optoelectronic devices technology into the ranks of the advanced countries, then became China’s 1991 top ten science and technology news. The quantum well laser developed by Xiao Jianwei et al. Adopts a strained layer structure, which greatly reduces the threshold current, and the optimal value is as low as 1.55mA, which is the best result reported in the literature at home and abroad so far. The laser can also work at very high temperatures of 155 ℃